| PART |
Description |
Maker |
| BGY282 |
dual band UHF amplifier module for GSM900 and GSM1800
|
Philips Semiconductors
NXP Semiconductors
|
| NE5500179A NE5500179A-T1 |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| AWB7122P7 AWB7122P8 AWB7122P9 |
1805 MHz to 1880 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| PH1819-45A |
L BAND, Si, NPN, RF POWER TRANSISTOR
Wireless Power Transistor 45 Watts 1805 - 1880 MHz
Wireless Power Transistor 45 Watts, 1805 - 1880 MHz
|
Kycon, Inc.
MACOM[Tyco Electronics]
|
| OE3202G-004 OE3202G-010 OE3202G_004_010 |
1.3 レm Edge-Emitting LED DIP Module 1.3レ米边发射LED双酯模块
1.3 m Edge-Emitting LED DIP Module
1.3 μm Edge-Emitting LED DIP Module
1.3 um Edge-Emitting LED DIP Module
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic components
OKI[OKI electronic componets]
|
| RMPA1765 |
K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module
|
Fairchild Semiconductor Corporation
|
| RF2367 RF23671 RF2367PCBA-41X |
PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER
|
RF Micro Devices
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
| PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| TQM7M5013 |
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
|
TriQuint Semiconductor
|
